IEC TS 62433-1:2011

EMC IC modelling - Part 1: General modelling framework

IEC/TS 62433-1:2011 provides specifications for model-categories of EMC IC modelling, definitions of terms that are commonly used in IEC 62433 series, modelling approaches that can be used, and requirements for each modelling that is standardized in this series.

Modèles de circuits intégrés pour la CEM - Partie 1: Cadre de modèle général

La CEI/TS 62433-1:2011 fournit des spécifications relatives aux catégories de modèles de circuits intégrés pour la CEM, des définitions des termes couramment utilisés dans la série CEI 62433, des approches pouvant être utilisées pour la modélisation, et des exigences relatives à chaque modèle normalisé dans cette série.

General Information

• Status: Replaced
• Publication Date: 20-Apr-2011
• ICS: 31.200 - Integrated circuits. Microelectronics
• Technical Committee: SC 47A - Integrated circuits
• Drafting Committee: WG 2 - TC 47/SC 47A/WG 2
• Current Stage: DELPUB - Deleted Publication
• Start Date: 30-Jun-2017
• Completion Date: 08-Mar-2019

Relations

• Revised: IEC 62433-1:2019 - EMC IC modelling - Part 1: General modelling framework
• Effective Date: 05-Sep-2023

Standards Content (Sample)

IEC/TS 62433-1


®


Edition 1.0 2011-04



TECHNICAL



SPECIFICATION



SPÉCIFICATION
TECHNIQUE
EMC IC modelling –
Part 1: General modelling framework

Modèles de circuits intégrés pour la CEM –
Partie 1: Cadre de modèle général


IEC/TS 62433-1:2011

---------------------- Page: 1 ----------------------
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---------------------- Page: 2 ----------------------
IEC/TS 62433-1


®


Edition 1.0 2011-04



TECHNICAL



SPECIFICATION



SPÉCIFICATION
TECHNIQUE
EMC IC modelling –
Part 1: General modelling framework

Modèles de circuits intégrés pour la CEM –
Partie 1: Cadre de modèle général


INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
CODE PRIX L
ICS 31.200 ISBN 978-2-88912-473-2

® Registered trademark of the International Electrotechnical Commission
Marque déposée de la Commission Electrotechnique Internationale

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– 2 – TS 62433-1  IEC:2011


CONTENTS


1 Scope . 6

2 Normative references . 6


3 Terms and definitions . 6

4 Definition of models . 7

4.1 General . 7

4.2 Conducted emission model . 7

4.3 Radiated emission model . 7

4.4 Conducted immunity model . 7
4.5 Radiated immunity model . 8
5 Modelling approaches. 8
5.1 General . 8
5.2 Black box modelling approach . 8
5.3 Equivalent circuit modelling approach . 9
5.4 Other modelling approaches . 9
5.4.1 Electromagnetic modelling approach . 9
5.4.2 Statistical modelling approach . 9
6 Requirements of model description . 9
Annex A (normative) Requirements for EMC IC models . 11

Table A.1 − Requirements for model description . 11

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TS 62433-1  IEC:2011 – 3 –


INTERNATIONAL ELECTROTECHNICAL COMMISSION

____________



EMC IC MODELLING –



Part 1: General modelling framework





FOREWORD


1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
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8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
The main task of IEC technical committees is to prepare International Standards. In

exceptional circumstances, a technical committee may propose the publication of a technical
specification when
• the required support cannot be obtained for the publication of an International Standard,
despite repeated efforts, or
• the subject is still under technical development or where, for any other reason, there is the
future but no immediate possibility of an agreement on an International Standard.
Technical specifications are subject to review within three years of publication to decide
whether they can be transformed into International Standards.
IEC 62433-1, which is a technical specification, has been prepared by subcommittee 47A:
Integrated circuits, of IEC technical committee 47: Semiconductor devices.

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– 4 – TS 62433-1  IEC:2011


The text of this specification is based on the following documents:

Enquiry draft Report on voting


47A/840/DTS 47A/850A/RVC



Full information on the voting for the approval of this technical specification can be found in

the report on voting indicated in the above table.


This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.


A list of all parts of the IEC 62433 series, under the general title EMC IC modelling, can be
found on the IEC website.
The committee has decided that the contents of this publication will remain unchanged until
the stability date indicated on the IEC web site under "http://webstore.iec.ch" in the data
related to the specific publication. At this date, the publication will be
• transformed into an International standard,
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.

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TS 62433-1  IEC:2011 – 5 –


INTRODUCTION


The International Standards of IEC 62433 series provide specifications for EMC IC modelling.

EMC IC model is the model of integrated circuits for electro-magnetic compatibility.


IC models that are built in conformity with these International Standards can be applied to

simulations for EMC and/or evaluations of EMI (electro-magnetic interference) as well as EMS

(electro-magnetic susceptibility) of electronic systems.

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– 6 – TS 62433-1  IEC:2011


EMC IC MODELLING –



Part 1: General modelling framework








1 Scope


This part of the IEC 62433 series provides specifications for model-categories of EMC IC

modelling, definitions of terms that are commonly used in IEC 62433 series, modelling
approaches that can be used, and requirements for each modelling that is standardized in this
series.
2 Normative references
The following referenced documents are indispensable for the application of this document.
For dated references, only the edition cited applies. For undated references, the latest edition
of the referenced document (including any amendments) applies.
IEC 60050-131, International Electrotechnical Vocabulary (IEV) – Chapter 131: Circuit theory
IEC 60050-161, International Electrotechnical Vocabulary (IEV) – Chapter 161:
Electromagnetic compatibility
3 Terms and definitions
For the purposes of this document, the terms and definitions given in IEC 60050-131,
IEC 60050-161 and the following apply.
3.1
reference node
node of a network where the voltages of other nodes, which belong to the network, are
determined by reference to the node
NOTE In many cases the voltage of the reference node is set as zero for descriptive purposes.
3.2
reference terminal

terminal of a circuit block where the voltages of other terminals, which belong to the block, are
determined by reference to the terminal
3.3
internal activity
IA
component of an IC model represented by a current or voltage source, which originates in
activity of active devices in an IC or in a portion of the IC
NOTE IA is applicable for both analogue and digital circuitry.
3.4
passive distribution network
PDN
component of an IC model that represents the characteristics of propagation path of
electromagnetic noises such as power distribution network

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TS 62433-1  IEC:2011 – 7 –


3.5

inter-block coupling

IBC

network of passive elements that presents a coupling effect between circuit blocks


4 Definition of models


4.1 General

Four EMC IC models presented in IEC 62433 series are defined in 4.2 through 4.5.


These models can be used for
– device-to-device comparison,
– risk assessment for the disturbance among devices involved in multi-chip technology
(such as MCM, SiP), and
– evaluation of the coupling between a device and PCB tracks.
4.2 Conducted emission model
A conducted emission (CE) model is a macro-model which describes an Integrated Circuit (IC)
or multiple dies in a package or module (System in Package, SiP) as a source of conducted
RF disturbances.
The CE model shall be described as a multi-terminal or a multi-port circuit which can be linear
or nonlinear. Each CE model consists of internal activities (IAs) as noise sources and passive
distribution networks (PDNs) which express characteristics of internal circuits in a form of a
black box and/or an equivalent circuit. The model can include sub-models of inter-block
coupling (IBC) if needed.
The model describes RF disturbances at external terminals of an IC as voltage and/or current
which are generated by its internal operations.
4.3 Radiated emission model
A radiated emission (RE) model is a macro-model which describes radiated RF disturbances
generated by an integrated circuit (IC) or multiple dies in a package or module (System in
Package, SiP).
The RE model shall be described as equivalent sources of electric or magnetic fields, which
cause near-field coupling or far-field radiation, or an equivalent circuit which express electric

or magnetic coupling between the IC or dies and external circuits or enclosures.
4.4 Conducted immunity model
A conducted immunity (CI) model is a macro-model which describes an Integrated Circuit (IC)
or multiple dies in a package or module (System in Package, SiP) as a victim of conducted RF
disturbances applied from outside.
The CI model shall be described as a multi-terminal or a multi-port circuit in a form of a black
box and/or an equivalent circuit which may be linear or nonlinear.
The CI model provides measures or criteria of malfunctions caused by RF disturbances
injected at external terminals as voltage, current, or RF power.

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– 8 – TS 62433-1  IEC:2011


4.5 Radiated immunity model


A radiated immunity (RI) model is a macro-model which describes an Integrated Circuit (IC) or

multiple dies in a package or module (System in Package, SiP) as a victim of radiated RF

disturbances from outside.


The RI model is described as equivalent circuits which can express electric or magnetic

coupling between the IC or dies and external circuits or enclosures.


The RI model provides measures or criteria of malfunctions caused by RF disturbances

applied as electric or magnetic fields in near-field or electromagnetic field.

5 Modelling approaches
5.1 General
Description of an EMC IC model, such as equivalent circuit parameters, can be derived from
design data of the device, or extracted from data obtained by measurement. Each of the
models shall contain information of an internal integrated circuit (IC) or multiple dies as well as
that of a package.
The conducted emission (CE) or conducted immunity (CI) model can be expressed in either a
form of a black box model, or an equivalent circuit model. The model shall be expressed with
a circuit concept including terminals and/or nodes.
The radiated emission (RE) or radiated immunity (RI) model can be expressed with either an
electromagnetic model or an equivalent circuit model. The electromagnetic RE model
expresses near field or far field which causes electromagnetic interference (EMI). The
electromagnetic RI model expresses electromagnetic coupling induced in the device. The
equivalent circuit model for RE/RI describes electric or magnetic coupling with capacitive or
inductive circuit elements. The equivalent circuit model for RE/RI may include a black-box
model as a sub-model.
The following sub-clauses describe modelling approach for possible expressions of each
model. Some of the expressions can be combined and used in one model.
5.2 Black box modelling approach
The expression of a black box model is essentially an N-port circuit, whose characteristics are
expressed in a matrix form or with some circuit equations. When a black box model is used to
express a CE or RE model, some voltage and/or current sources are connected to the black
box as noise sources to express internal activities (IAs). The following matrix expressions are
available for black-box models.
For a linear circuit, or a circuit which can be approximated as linear, the following matrices
can be used; these matrices are the functions of frequency and time-variant, disregarding
non-linear elements.
• impedance (Z) matrix
• admittance (Y) matrix
• fundamental (F) matrix
• scattering (S) matrix
Elements of these matrices can be expressed with formulas with some parameters, or tables
which provide frequency characteristics of the circuit.

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TS 62433-1  IEC:2011 – 9 –


In the definition of a model, internal terminals/ports and external terminals/ports shall be

clearly defined and noted as prerequisite information for the matrices.


Characteristics of a distributed constant circuit, such as transmission lines, can be expressed

with a scattering (S) matrix as a multi-port circuit. For these circuits, definition of ports and

their locations shall be described with port impedance for each. Particularly when a

differential port is used, it is desirable to define a common-mode port as a counterpart of a

differential signal port.


5.3 Equivalent circuit modelling approach


Equivalent circuit models, both lumped element circuits and distributed constant circuits, can
be used to express electrical characteristics of CE/CI and RE/RI models. In the circuit
expression, non-linear circuits can be included as well as linear circuits.
A linear circuit which is described with a black box model, or a matrix model, may be
converted to an equivalent circuit model. Particularly when a model is constructed by
measurement, characteristics of the circuit are first expressed in a matrix form, and then
converted to an equivalent circuit.
Some of non-linear characteristics of a device can be obtained by measurement, and can be
included in an equivalent circuit model. Additionally, model simplification is possible using a
complex circuit model and generating information of the circuit by simulation.
In the description of a model which can be determined by measurement or simulation, the
method of model parameter extraction shall be described in each part of this series of
standard. An equivalent circuit model of a particular device shall contain all the information of
the circuit structure, values of circuit parameters, and its applicable conditions.
5.4 Other modelling approaches
Other modelling approaches are possible to obtain an EMC IC macro-model. The followings
are possible approaches.
5.4.1 Electromagnetic modelling approach
Distribution of sources of electromagnetic fields can be used as a radiated emission (RE)
model. Possible sources are as follows.
• Electric current distribution
• (Virtual) magnetic current distribution

• Electric charge distribution
• Electrical and/or magnetic scalar and/or vector potentials
• (To be defined)
5.4.2 Statistical modelling approach
Some of the electromagnetic interferences in digital systems are evaluated statistically.
Particularly, performance degradation of wireless digital communication systems has strong
correlation to statistical characteristics of radiated emission. A statistical model such as below
is one possible model.
• amplitude probability distribution (APD).
6 Requirements of model description
It is necessary to provide the following information with IC model (see Annex A).

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– 10 – TS 62433-1  IEC:2011


• IC information for modelling IC name, package, pin arrangement etc.


• Model specification

• Modelling condition

• Applicable range and applicable operational mode.

---------------------- Page: 12 ----------------------
TS 62433-1  IEC:2011 – 11 –


Annex A

(normative)



Requirements for EMC IC models


This annex shows requisite information with the model provision. Provide information for the

cell marked with “○” in Table A.1. The supplier and the user must confer when there is a
necessary parameter excluding Table A.1.


Table A.1 – Requirements for model description

Element Description Model category
CE CI RE RI
Header Model name and model version ○ ○ ○ ○
Release date ○ ○ ○ ○
Model supplier ○ ○ ○ ○
IC name ○ ○ ○ ○
Package type ○ ○ ○ ○
Package information Number of pins ○ ○ ○ ○
Pin arrangement ○ ○ ○ ○
Model
Model category (CE, CI, RE or RI) ○ ○ ○ ○
specification
Modelling approach ○ ○ ○ ○
a a a
Modelling domain ("time" or "frequency") ○ T.B.D. T.B.D. T.B.D.
a a a
Model hierarchy structure ○ T.B.D. T.B.D. T.B.D.
a a a
Names of pins ○ T.B.D. T.B.D. T.B.D.
IC external terminals
a a a
Positions of pins ○ T.B.D. T.B.D. T.B.D.
a a a
Names of internal terminals ○ T.B.D. T.B.D. T.B.D.
Modelling Modelling procedure ("using design data"
a a a
○ T.B.D. T.B.D. T.B.D.
condition or "from measurements")
a a a
Operational mode or test vector ○ T.B.D. T.B.D. T.B.D.
PCB design (from measurements) and
a a a
○ T.B.D. T.B.D. T.B.D.
circuit diagram
a a a
Temperature ○ T.B.D. T.B.D. T.B.D.
a a a
Power supply voltages ○ T.B.D. T.B.D. T.B.D.
a a a
Measured data ○ T.B.D. T.B.D. T.B.D.

a a a
Applicable range
Frequency range ○ T.B.D. T.B.D. T.B.D.
a a a
Power supply voltage range ○ T.B.D. T.B.D. T.B.D.
a a a
Temperature range ○ T.B.D. T.B.D. T.B.D.
a a a
Operating frequency range ○ T.B.D. T.B.D. T.B.D.
a a a
Output loads range ○ T.B.D. T.B.D. T.B.D.
a a a
Worst case in applicable ranges ○ T.B.D. T.B.D. T.B.D.
Applicable a a a
Operational mode ○ T.B.D. T.B.D. T.B.D.
operational mode
Restriction
Restrictions of application, if any a a a
○ T.B.D. T.B.D. T.B.D.
(I/O port setting, etc)
a
To be defined in future documents.
_____________

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– 12 – TS 62433-1  CEI:2011


SOMMAIRE


1 Domaine d'application . 16

2 Références normatives . 16


3 Termes et définitions . 16

4 Définition des modèles . 17

4.1 Généralités. 17

4.2 Modèle d’émissions conduites . 17

4.3 Modèle d’émissions rayonnées . 17

4.4 Modèle d’immunité conduite . 18
4.5 Modèle d’immunité rayonnée . 18
5 Approches pour la modélisation . 18
5.1 Généralités. 18
5.2 Approche par le modèle de la boîte noire . 19
5.3 Approche par le modèle du circuit équivalent . 19
5.4 Autres approches pour la modélisation . 20
5.4.1 Approche par le modèle électromagnétique . 20
5.4.2 Approche par le modèle statistique . 20
6 Exigences relatives à la description des modèles . 20
Annexe A (normative) Exigences relatives aux modèles de circuits intégrés pour la
CEM . 21


Tableau A.1 − Exigences relatives à la description des modèles . 21

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TS 62433-1  CEI:2011 – 13 –


COMMISSION ÉLECTROTECHNIQUE INTERNATIONALE

____________



MODÈLES DE CIRCUITS INTÉGRÉS POUR LA CEM –



Partie 1: Cadre de modèle général





AVANT-PROPOS


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