SIST EN IEC 61643-341:2020

Components for low-voltage surge protection -Part 341: Performance requirements and test circuits for thyristor surge suppressors (TSS)

This part of IEC 61643 specifies standard test circuits and methods for thyristor surge
suppressor (TSS) components. These surge protective components, SPCs, are specially
formulated thyristors designed to limit overvoltages and divert surge currents by clamping and
switching actions. These SPCs are used in the construction of surge protective devices
(SPDs) and equipment used in Information & Communications Technologies (ICT) networks
with voltages up to AC 1 000 V and DC 1 500 V. This document is applicable to gated or nongated
TSS components with third quadrant (-v and –i) characteristics of blocking, conducting
or switching.
This document contains information on
• terminology;
• letter symbols;
• essential ratings and characteristics;
• rating verification and characteristic measurement;
This document does not apply to the conventional three-terminal thyristors as covered by
IEC 60747-6.

Bauelemente für Überspannungsschutzgeräte für Niederspannung - Teil 341: Leistungsanforderungen sowie Prüfschaltungen für Suppressordioden (TSS)

Composants pour parafoudres basse tension - Partie 341: Exigences de performance et circuits d'essai pour parafoudres à thyristor (TSS)

IEC 61643-341:2020 spécifie les circuits d'essai et les méthodes normalisés pour les composants de parafoudre à thyristor (TSS, Thyristor Surge Suppressor). Ces composants de protection contre les surtensions (SPC, Surge Protective Components) sont des thyristors spécialement conçus pour limiter les surtensions et écouler les courants de surcharge par des actions d'écrêtage et de commutation. Ces SPC sont utilisés dans la construction de parafoudres (SPD, Surge Protective Devices) et d'équipements utilisés dans les réseaux de technologies de l'information et de la communication (TIC) dont les tensions atteignent 1 000 V CA et 1 500 V CC. Le présent document s'applique aux composants TSS à gâchette ou non, équipés d'un troisième quadrant (-v et –i) ayant des caractéristiques de blocage, de conduction ou de commutation. Le présent document contient des indications sur:
- la terminologie;
- les symboles littéraux;
- les valeurs assignées et les caractéristiques essentielles;
- la vérification des valeurs assignées et la mesure des caractéristiques.
Le présent document ne s'applique pas aux thyristors conventionnels à trois bornes couverts dans l'IEC 60747-6. Cette deuxième édition de l'IEC 61643-341 annule et remplace la première édition parue en 2001. Cette édition constitue une révision technique. Cette édition inclut la modification technique majeure suivante par rapport à l'édition précédente: Ajout de valeurs de performances.

Sestavni deli za nizkonapetostne naprave za zaščito pred prenapetostnimi udari - 341. del: Specifikacije za tiristorske prenapetostne omejevalnike (TSS)

General Information

• Status: Published
• Publication Date: 02-Sep-2020
• ICS: 29.120.50 - Fuses and other overcurrent protection devices
• ICS: 31.080.10 - Diodes
• Technical Committee: POD - Surge aresters
• Current Stage: 6060 - National Implementation/Publication (Adopted Project)
• Start Date: 31-Jul-2020
• Due Date: 05-Oct-2020
• Completion Date: 03-Sep-2020
• Directive: 2014/30/EU - Directive 2014/30/EU of the European Parliament and of the Council of 26 February 2014 on the harmonisation of the laws of the Member States relating to electromagnetic compatibility (recast)
• Ref Project: EN IEC 61643-341:2020 - Components for low-voltage surge protection - Part 341: Performance requirements and test circuits for thyristor surge suppressors (TSS)

Relations

• Replaces: SIST EN 61643-341:2005 - Components for low-voltage surge protective devices -- Part 341: Specification for thyristor surge suppressors (TSS)
• Effective Date: 01-Sep-2020

Standards Content (Sample)

SLOVENSKI STANDARD
SIST EN IEC 61643-341:2020
01-oktober-2020
Nadomešča:
SIST EN 61643-341:2005
Sestavni deli za nizkonapetostne naprave za zaščito pred prenapetostnimi udari -
341. del: Specifikacije za tiristorske prenapetostne omejevalnike (TSS)
Components for low-voltage surge protection -Part 341: Performance requirements and
test circuits for thyristor surge suppressors (TSS)
Ta slovenski standard je istoveten z: EN IEC 61643-341:2020
ICS:
29.120.50 Varovalke in druga Fuses and other overcurrent
nadtokovna zaščita protection devices
31.080.10 Diode Diodes
SIST EN IEC 61643-341:2020 en
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

---------------------- Page: 1 ----------------------
SIST EN IEC 61643-341:2020

---------------------- Page: 2 ----------------------
SIST EN IEC 61643-341:2020


EUROPEAN STANDARD EN IEC 61643-341

NORME EUROPÉENNE

EUROPÄISCHE NORM
July 2020
ICS 31.080.10 Supersedes EN 61643-341:2001 and all of its
amendments and corrigenda (if any)
English Version
Components for low-voltage surge protection - Part 341:
Performance requirements and test circuits for thyristor surge
suppressors (TSS)
(IEC 61643-341:2020)
Composants pour parafoudres basse tension - Partie 341: Bauelemente für Überspannungsschutzgeräte für
Exigences de performance et circuits d'essai pour Niederspannung - Teil 341: Leistungsanforderungen sowie
parafoudres à thyristor (TSS) Prüfschaltungen für Suppressordioden (TSS)
(IEC 61643-341:2020) (IEC 61643-341:2020)
This European Standard was approved by CENELEC on 2020-06-17. CENELEC members are bound to comply with the CEN/CENELEC
Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC
Management Centre or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other language made by translation
under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the
same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic,
Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the
Netherlands, Norway, Poland, Portugal, Republic of North Macedonia, Romania, Serbia, Slovakia, Slovenia, Spain, Sweden, Switzerland,
Turkey and the United Kingdom.


European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
CEN-CENELEC Management Centre: Rue de la Science 23, B-1040 Brussels
© 2020 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members.
 Ref. No. EN IEC 61643-341:2020 E

---------------------- Page: 3 ----------------------
SIST EN IEC 61643-341:2020
EN IEC 61643-341:2020 (E)
European foreword
The text of document 37B/218/FDIS, future edition 2 of IEC 61643-341, prepared by SC 37B
"Components for low-voltage surge protection" of IEC/TC 37 "Surge arresters" was submitted to the
IEC-CENELEC parallel vote and approved by CENELEC as EN IEC 61643-341:2020.
The following dates are fixed:
• latest date by which the document has to be implemented at national (dop) 2021-03-17
level by publication of an identical national standard or by endorsement
• latest date by which the national standards conflicting with the (dow) 2023-06-17
document have to be withdrawn
This document supersedes EN 61643-341:2001 and all of its amendments and corrigenda (if any).
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CENELEC shall not be held responsible for identifying any or all such patent rights.
Endorsement notice
The text of the International Standard IEC 61643-341:2020 was approved by CENELEC as a
European Standard without any modification.
In the official version, for Bibliography, the following notes have to be added for the standards
indicated:
IEC 60060-1:2010 NOTE Harmonized as EN 60060-1:2010 (not modified)
IEC 60068-2-20:2008 NOTE Harmonized as EN 60068-2-20:2008 (not modified)
IEC 60068-2-21:2006 NOTE Harmonized as EN 60068-2-21:2006 (not modified)
IEC 60099-4:2014 NOTE Harmonized as EN 60099-4:2014 (not modified)
IEC 60721-3-3:2019 NOTE Harmonized as EN IEC 60721-3-3:2019 (not modified)
IEC 60721-3-9:1993 NOTE Harmonized as EN 60721-3-9:1993 (not modified)
IEC 60749-1:2002 NOTE Harmonized as EN 60749-1:2003 (not modified)
IEC 60950-1:2005 NOTE Harmonized as EN 60950-1:2006 (modified)
IEC 61000-4-5:2014 NOTE Harmonized as EN 61000-4-5:2014 (not modified)
IEC 61643-11:2011 NOTE Harmonized as EN 61643-11:2012 (modified)
IEC 62475:2010 NOTE Harmonized as EN 62475:2010 (not modified)

2

---------------------- Page: 4 ----------------------
SIST EN IEC 61643-341:2020
EN IEC 61643-341:2020 (E)
Annex ZA
(normative)

Normative references to international publications
with their corresponding European publications
The following documents are referred to in the text in such a way that some or all of their content
constitutes requirements of this document. For dated references, only the edition cited applies. For
undated references, the latest edition of the referenced document (including any amendments)
applies.
NOTE 1  Where an International Publication has been modified by common modifications, indicated by (mod), the relevant
EN/HD applies.
NOTE 2  Up-to-date information on the latest versions of the European Standards listed in this annex is available here:
www.cenelec.eu.
Publication Year Title EN/HD Year
IEC 60050-521 - International Electrotechnical Vocabulary - - -
Part 521: Semiconductor devices and
integrated circuits
IEC 60068-2-20 2008 Environmental testing - Part 2-20: Tests - EN 60068-2-20 2008
Test T: Test methods for solderability and
resistance to soldering heat of devices with
leads



3

---------------------- Page: 5 ----------------------
SIST EN IEC 61643-341:2020

---------------------- Page: 6 ----------------------
SIST EN IEC 61643-341:2020



IEC 61643-341

®


Edition 2.0 2020-05




INTERNATIONAL



STANDARD




NORME



INTERNATIONALE











Components for low-voltage surge protection –

Part 341: Performance requirements and test circuits for thyristor surge

suppressors (TSS)




Composants pour parafoudres basse tension –

Partie 341: Exigences de performance et circuits d'essai pour parafoudres


à thyristor (TSS)













INTERNATIONAL

ELECTROTECHNICAL

COMMISSION


COMMISSION

ELECTROTECHNIQUE


INTERNATIONALE




ICS 31.080.10 ISBN 978-2-8322-8304-2




Warning! Make sure that you obtained this publication from an authorized distributor.

Attention! Veuillez vous assurer que vous avez obtenu cette publication via un distributeur agréé.

® Registered trademark of the International Electrotechnical Commission
Marque déposée de la Commission Electrotechnique Internationale

---------------------- Page: 7 ----------------------
SIST EN IEC 61643-341:2020
– 2 – IEC 61643-341:2020 © IEC 2020
CONTENTS
FOREWORD . 6
1 Scope . 8
2 Normative references . 8
3 Terms, definitions, abbreviated terms and symbols . 8
3.1 Parametric terms, letter symbols and definitions . 9
3.2 General terms . 9
3.3 Main terminal ratings . 9
3.4 Main terminal characteristics . 11
3.5 Additional and derived parameters . 12
3.6 Temperature related parameters . 12
3.7 Gate terminal parameters . 13
3.8 Abbreviated terms . 15
3.9 Circuit symbols . 15
4 TSS types . 16
5 Service conditions . 18
5.1 Normal service conditions . 18
.
5.2 Storage temperature range, T min to T max. . 18
stg stg
6 Mechanical requirements and identification . 18
6.1 Robustness of terminations . 18
6.2 Solderability . 18
6.3 Marking . 18
6.4 Documentation . 18
7 Standard test methods . 19
7.1 Failure rates . 19
7.2 Test conditions . 19
7.2.1 General. 19
7.2.2 Standard atmospheric conditions . 19
7.2.3 Measurement errors . 20
7.2.4 Measurement accuracy . 20
7.2.5 Designated impulse shape and values . 20
7.2.6 Multiple TSS . 20
7.2.7 Gated TSS testing . 20
7.3 Rating test procedures . 20
7.3.1 General. 20
7.3.2 Repetitive peak off-state voltage, V . 21
DRM
7.3.3 Repetitive peak on-state current, I . 21
TRM
7.3.4 Non-repetitive peak on-state current, I . 22
TSM
7.3.5 Non-repetitive peak pulse current, I . 23
PP
7.3.6 Repetitive peak reverse voltage, V . 24
RRM
7.3.7 Non-repetitive surge forward current, I . 24
FSM
7.3.8 Repetitive peak forward current, I . 24
FRM
7.3.9 Critical rate of rise of on-state current, di/dt . 25
7.4 Characteristic test procedures . 26
7.4.1 General. 26
7.4.2 Off-state current, I . 26
D
7.4.3 Repetitive peak off-state current, I . 27
DRM

---------------------- Page: 8 ----------------------
SIST EN IEC 61643-341:2020
IEC 61643-341:2020 © IEC 2020 – 3 –
7.4.4 Repetitive peak reverse current, I . 27
RRM
7.4.5 Breakover voltage, V and current, I . 27
(BO) (BO)
7.4.6 On-state voltage, V . 29
T
7.4.7 Holding current, I . 33
H
7.4.8 Off-state capacitance, C . 34
o
7.4.9 Forward voltage, V . 37
F
7.4.10 Peak forward recovery voltage, V . 37
FRM
7.4.11 Critical rate of off-state voltage rise, dv/dt . 38
7.4.12 Variation of holding current with temperature . 38
7.4.13 Gate-to-adjacent terminal peak off-state voltage and peak off-state
gate current, V , I . 38
GDM GDM
7.4.14 Gate reverse current, adjacent terminal open, I , I . 39
GAO GKO
7.4.15 Gate reverse current, main terminals short-circuited, I , I . 40
GAS GKS
Annex A (informative) Common impulse waveshapes . 41
A.1 General . 41
A.2 Types of impulse generator . 41
A.3 Impulse generator parameters . 41
A.3.1 Glossary of terms. 41
A.3.2 Virtual parameters . 42
A.4 Impulse generators typically used for surge protector testing . 44
A.4.1 General. 44
A.4.2 Impulse generators with a defined voltage waveform . 44
A.4.3 Impulse generators with a defined current waveform . 44
A.4.4 Generators with defined voltage and current waveforms . 45
Annex B (informative) Glossary of IEC 60747-6 [10] thyristor terms . 48
B.1 General . 48
B.2 Thyristor types . 48
B.3 Basic terms defining the static voltage-current characteristics of triode
thyristors . 49
B.4 Basic terms defining the static voltage-current characteristics of diode
thyristors . 51
B.5 Particulars of the static voltage-current characteristics of triode and diode

thyristors . 52
B.6 Terms related to ratings and characteristics; principal voltages . 54
B.7 Terms related to ratings and characteristics; principal currents . 55
B.8 Terms related to ratings and characteristics; gate voltages and currents . 57
B.9 Terms related to ratings and characteristics; powers, energies and losses . 59
B.10 Letter symbols . 61
B.10.1 General. 61
B.10.2 List of letter symbols . 62
Annex C (informative) Additional parametric tests . 64
C.1 General . 64
C.2 Temperature derating. 64
C.3 Thermal resistance, R . 64
th
C.4 Transient thermal impedance, Z (t) . 65
th
C.5 Gate reverse current, on-state, I , I . 66
GAT GKT
C.6 Gate reverse current, forward conducting state, I , I . 67
GAF GKF
C.7 Gate switching charge, Q . 68
GS
C.8 Peak gate switching current, I . 70
GSM

---------------------- Page: 9 ----------------------
SIST EN IEC 61643-341:2020
– 4 – IEC 61643-341:2020 © IEC 2020
C.9 Gate-to-adjacent terminal breakover voltage, V , V . 71
GK(BO) GA(BO)
Annex D (normative) Preferred values . 72
D.1 General . 72
D.2 V and V . 72
(BO) DRM
D.3 C , V and I . 73
O DRM PP
D.4 I . 74
H
D.5 I and time to half value (duration) . 74
PP
Bibliography . 75

Figure 1 – Fixed voltage, two terminals: a) reverse blocking and b) reverse conducting . 15
Figure 2 – Gated reverse blocking: a) P gate b) N gate and c) P & N gate . 16
Figure 3 – Gated reverse conducting: a) P gate and b) N gate . 16
Figure 4 – Bidirectional: a) 2 terminal fixed voltage and b) gated . 16
Figure 5 – Switching quadrant characteristics: a) fixed-voltage TSS and b) gated TSS . 17
Figure 6 – TSS non-switching characteristics: a) reverse blocking b) reverse
conducting . 17
Figure 7 – Test circuit for verifying repetitive peak off-state voltage (V ) . 21
DRM
Figure 8 – Test circuit for verifying repetitive peak on-state current, I . 21
TRM
Figure 9 – Repetitive peak on-state current waveforms . 22
Figure 10 – Test circuit for verifying non-repetitive peak on-state current, I . 23
TSM
Figure 11 – Test circuit for verifying non-repetitive peak pulse current, I . 24
PP
Figure 12 – Test circuit for verifying critical rate of rise of on-state current (di/dt) . 25
Figure 13 – Half sine-wave di/dt test circuit . 26
Figure 14 – Test circuit for off-state current, I at V . 27
D D
Figure 15 – Test circuit for breakover, V and I and on-state voltage, V . 28
(BO) (BO) T
Figure 16 – Voltage and current waveforms versus time for a fixed-voltage TSS
showing switch-on, on-state and switch-off events . 28
Figure 17 – Waveform expansions of Figure 16 . 30
Figure 18 – Voltage and current waveforms versus time for a gated TSS showing
switch-on, on-state and switch-off events . 31
Figure 19 – Waveform expansions of Figure 18 . 32
Figure 20 – Test circuit for holding current, I . 33
H
Figure 21 – Test circuit for holding current with additional DC bias . 34
Figure 22 – Test circuit for capacitance measurement . 34
Figure 23 – Test circuit for capacitance measurement with external DC bias . 35
Figure 24 – Test circuit for capacitance measurement of multi-terminal TSS . 36
Figure 25 – Diode voltage and current waveforms versus time showing V and
FRM
rising current di/dt . 37
Figure 26 – Test circuit for exponential critical rate of off-state voltage rise, dv/dt . 38
Figure 27 – Test circuit for gate-to-adjacent terminal peak off-state voltage and
current, V and I . 39
GDM GDM
Figure 28 – Test circuit for gate reverse current, adjacent terminal open, I , I . 39
GAO GKO
Figure 29 – Test circuit for gate reverse current, main terminals short-circuited, I ,
GAS
I . 40
GKS
Figure A.1 – Current or voltage impulse amplitude versus time showing a 10 % to
90 % T front time and T time to half value . 43
1 2

---------------------- Page: 10 ----------------------
SIST EN IEC 61643-341:2020
IEC 61643-341:2020 © IEC 2020 – 5 –
Figure A.2 – Voltage impulse amplitude versus time showing a 30 % to 90 % T front
1
time and T time to half value . 43
2
Figure B.1 – Particulars of the static characteristic of unidirectional thyristors. 52
Figure B.2 – Particulars of the static characteristic of bidirectional thyristors . 53
Figure B.3 – a) Approximation of the on-state V -I characteristic b) Approximation of
T T
the reverse V -I characteristic . 60
R R
Figure C.1 – Test circuit for thermal resistance and impedance . 65
Figure C.2 – Thermal impedance versus time . 66
Figure C.3 – Test circuit for gate reverse current, on-state, I , I . 67
GAT GKT
Figure C.4 – Test circuit for gate reverse current, forward conducting state, I ,
GAF
I . 68
GKF
Figure C.5 – Test circuit for gate switching current, gate switching charge and gate-to-
adjacent terminal breakover voltage, I , Q , V , V . 69
GSM GS GK(BO) GA(BO)
Figure C.6 – Test circuit of an integrated gate diode TSS for gate switching current,
gate switching charge and gate-to-adjacent terminal breakover voltage I , Q ,
GSM GS
V , V . 70
GK(BO) GA(BO)
Figure C.7 – Overall and expanded clamping waveforms for a P-type gate TSS
showing V and Q measurement (di /dt = 10 A/µs, V = –72 V) . 71
GK(BO) GS K GG
Figure D.1 – V /V ratio against V . 72
(BO) DRM DRM
Figure D.2 – V vs V . 73
(BO) DRM
Figure D.3 – Capacitance variation with DC bias . 73
Figure D.4 – I versus Duration for various 10/1 000 current ratings . 74
PP

Table 1 – Types of TSS . 17
Table 2 – Breakover ramp rate test values . 29
Table A.1 – Voltage impulse generators . 44
Table A.2 – Current impulse generators . 45
Table A.3 – Voltage and current impulse generators . 46
Table A.4 – Other voltage and current impulse generators . 47
Table B.1 – Additional general subscripts . 61
Table B.2 – Principal voltages, anode-cathode voltages. 62
Table B.3 – Principal currents, anode currents, cathode currents . 62
Table B.4 – Gate voltages . 63
Table B.5 – Gate currents . 63
Table B.6 – Sundry quantities . 63
Table B.7 – Power loss . 63

---------------------- Page: 11 ----------------------
SIST EN IEC 61643-341:2020
– 6 – IEC 61643-341:2020 © IEC 2020
INTERNATIONAL ELECTROTECHNICAL COMMISSION
___________

COMPONENTS FOR LOW-VOLTAGE SURGE PROTECTION –

Part 341: Performance requirements and test circuits
for thyristor surge suppressors (TSS)

FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, IEC publishes International Standards, Technical Specifications,
Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC
Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested
in the subject dealt with may participate in this preparatory work. International, governmental and non-
governmental organizations liaising with the IEC also participate in this preparation. IEC collaborates closely
with the International Organization for Standardization (ISO) in accordance with conditions determined by
agreement between the two organizations.
2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
consensus of opinion on the relevant subjects since each technical committee has representation from all
interested IEC National Committees.
3) IEC Publications have the form of recommendations for international use and are accepted by IEC National
Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC
Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any
misinterpretation by any end user.
4) In order to promote international uniformity, IEC National Committees underta
...