Semiconductor devices - Micro-electromechanical devices - Part 22: Electromechanical tensile test method for conductive thin films on flexible substrates

IEC 62047-22:2014 specifies a tensile test method to measure electromechanical properties of conductive thin micro-electromechanical systems (MEMS) materials bonded on non-conductive flexible substrates. Conductive thin-film structures on flexible substrates are extensively utilized in MEMS, consumer products, and flexible electronics. The electrical behaviours of films on flexible substrates differ from those of freestanding films and substrates due to their interfacial interactions. Different combinations of flexible substrates and thin films often lead to various influences on the test results depending on the test conditions and the interfacial adhesion. The desired thickness of a thin MEMS material is 50 times thinner than that of the flexible substrate, whereas all other dimensions are similar to each other.

Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 22: Elektromechanisches Zug-Prüfverfahren für leitfähige Dünnschichten auf flexiblen Substraten

Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 22: Méthode d'essai de traction électromécanique pour les couches minces conductrices sur des substrats souples

L'IEC 62047-22:2014 spécifie une méthode d'essai de traction en vue de mesurer les propriétés électromécaniques des matériaux des systèmes microélectromécaniques (MEMS, Micro-Electromechanical Systems) de couches minces conductrices collés sur des substrats souples non conducteurs. Les structures en couches minces sur des substrats souples sont largement utilisées dans les MEMS, les produits grand public, et les électroniques montés sur support souple. Le comportement électrique des couches sur substrats souples diffère de celui des couches et substrats indépendants du fait des interactions liées aux interfaces. Différentes combinaisons de substrats souples et de couches minces influent souvent de diverses manières sur les résultats d'essai en fonction des conditions d'essais et de l'adhérence liée aux interfaces. L'épaisseur souhaitée d'un matériau MEMS mince est 50 fois plus mince que celle d'un substrat souple, alors que d'autres dimensions sont similaires les unes aux autres.

Polprevodniški elementi - Mikroelektromehanski elementi - 22. del: Metoda elektromehanskega nateznega preskušanja prevodnih tankih plasti na upogljivih podlagah (IEC 62047-22:2014)

Standard EN IEC 62047-22 določa metodo nateznega preskušanja za merjenje elektromehanskih lastnosti prevodnih tankih materialov mikroelektromehanskih sistemov (MEMS) na neprevodnih upogljivih podlagah. Prevodne tankoplastne strukture na upogljivih podlagah se obsežno uporabljajo v MEMS, potrošniških izdelkih in upogljivih elektronskih elementih. Električno obnašanje plasti na upogljivih podlagah se razlikuje od obnašanja prosto stoječih plasti in podlag zaradi medsebojnih vplivov površin. Različne kombinacije upogljivih podlag in tankih plasti pogosto vodijo v različne vplive na preskusne rezultate, odvisno od preskusnih pogojev in površinske sprijemljivosti. Želena debelina tankega materiala MEMS je 50-krat tanjša od debeline upogljive podlage, medtem ko so si vse druge mere podobne.

General Information

Status
Published
Publication Date
25-Sep-2014
Withdrawal Date
23-Jul-2017
Technical Committee
Drafting Committee
Current Stage
6060 - Document made available - Publishing
Start Date
26-Sep-2014
Completion Date
26-Sep-2014

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SLOVENSKI STANDARD
SIST EN 62047-22:2014
01-november-2014
Polprevodniški elementi - Mikroelektromehanski elementi - 22. del: Metoda
elektromehanskega nateznega preskušanja prevodnih tankih plasti na upogljivih
podlagah (IEC 62047-22:2014)
Semiconductor devices - Micro-electromechanical devices - Part 22: Electromechanical
tensile test method for conductive thin films on flexible substrates
/
Dispositifs a semiconducteurs - Dispositifs microélectromécaniques - Partie 22: Méthode
d'essai de traction électromécanique pour les couches minces conductrices sur des
substrats souples
Ta slovenski standard je istoveten z: EN 62047-22:2014
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
SIST EN 62047-22:2014 en
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

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SIST EN 62047-22:2014

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SIST EN 62047-22:2014


EUROPEAN STANDARD EN 62047-22

NORME EUROPÉENNE

EUROPÄISCHE NORM
September 2014
ICS 01.080.99

English Version
Semiconductor devices - Micro-electromechanical devices -
Part 22: Electromechanical tensile test method for conductive
thin films on flexible substrates
(IEC 62047-22:2014)
Dispositifs à semiconducteurs - Dispositifs Halbleiterbauelemente - Bauelemente der
microélectromécaniques - Mikrosystemtechnik -
Partie 22: Méthode d'essai de traction électromécanique Teil 22: Elektromechanisches Zug-Prüfverfahren für
pour les couches minces conductrices sur des substrats leitfähige Dünnschichten auf flexiblen Substraten
souples (IEC 62047-22:2014)
(CEI 62047-22:2014)
This European Standard was approved by CENELEC on 2014-07-24. CENELEC members are bound to comply with the CEN/CENELEC
Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC
Management Centre or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other language made by translation
under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the
same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic,
Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia,
Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland,
Turkey and the United Kingdom.


European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
CEN-CENELEC Management Centre: Avenue Marnix 17, B-1000 Brussels
© 2014 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members.
 Ref. No. EN 62047-22:2014 E

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SIST EN 62047-22:2014
EN 62047-22:2014 - 2 -
Foreword
The text of document 47F/186/FDIS, future edition 1 of IEC 62047-22, prepared by SC 47F
“Microelectromechanical systems” of IEC/TC 47 “Semiconductor devices" was submitted to the
IEC-CENELEC parallel vote and approved by CENELEC as EN 62047-22:2014.

The following dates are fixed:
(dop) 2015-04-24
• latest date by which the document has to be
implemented at national level by
publication of an identical national
standard or by endorsement
• latest date by which the national (dow) 2017-07-24
standards conflicting with the
document have to be withdrawn

Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CENELEC [and/or CEN] shall not be held responsible for identifying any or all such
patent rights.

Endorsement notice
The text of the International Standard IEC 62047-22:2014 was approved by CENELEC as a European
Standard without any modification.

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SIST EN 62047-22:2014
- 3 - EN 62047-22:2014
Annex ZA
(normative)

Normative references to international publications
with their corresponding European publications

The following documents, in whole or in part, are normatively referenced in this document and are
indispensable for its application. For dated references, only the edition cited applies. For undated
references, the latest edition of the referenced document (including any amendments) applies.

NOTE 1 When an International Publication has been modified by common modifications, indicated by (mod), the releva
...

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